Device Engineering Intern, ULP CMOS (Summer 2026)

GLOBALFOUNDRIES U.S.2 LLC • Ballston Spa, NY • 2h ago

About GlobalFoundriesGlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.Internship Program Overview: Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you'll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.Summary of Role:As a Device Engineering Intern in the Technology Development organization, you will contribute to the advancement of Ultra Low Power (ULP) CMOS technologies for applications including Automotive, IoT, Aerospace & Defense, and Smart Mobile Devices. Your responsibilities will include designing and analyzing experiments, test chip development, and device characterization to optimize silicon transistor performance. You will collaborate across technology teams and engage with product line management to align device parameters with GLOBALFOUNDRIES' technology roadmap and manufacturing goals.Essential Responsibilities include:Device test chip layout designInline and bench electric test submission and analysisDevice analysis automation with standardization and efficiency improvementSupport the development of Ultra Low Power (ULP) CMOS technologies through experiment design, test chip development, and device characterization for applications in Automotive, IoT, Aerospace & Defense, and Smart Mobile Devices.Collaborate with cross-functional technology teams and product line management to define device performance targets, ensure manufacturability, and align with GLOBALFOUNDRIES' technology roadmap.Other Responsibilities:Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.Required Qualifications:Education - At least a sophomore at time of application and actively pursuing a Bachelor's in Electrical Engineering, Materials Science, Solid State Physics or related field through an accredited degree program during the time of internship.Must have at least an overall 3.0 GPA and be in good academic standing.Language Fluency - English (Written & Verbal)Ability to work at least 40 hours per week during the internship.Preferred Qualifications: Prior related internship or co-op experienceDemonstrated prior leadership experience in the workplace, school projects, competitions, etc.Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.Strong written and verbal communication skillsStrong planning & organizational skillsKnowledge of CMOS Fabrication ProcessUnderstanding of solid state device physics, submicron FET architectures, and the implications of device characteristics#InternshipProgramUSExpected Salary Range $20.00 - $40.00 Expected Salary Range$0.00 - $0.00The exact Salary will be determined based on qualifications, experience and location.If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. An offer with GlobalFoundries is conditioned upon the successful completion of pre-

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